第5章wet工艺精选.docx

第五章WET工序 WET工序的构成 TFT-LCD在Array段的制程通常会分为镀膜，曝光和蚀刻三道大的工序。 Normally, Array process of TFT-LCD manufacturing is categorized into three major sub processes, sputteri ng, photo and etch ing. 而蚀刻工序根据工艺和设备的不同又可以分为干蚀刻和湿蚀刻， 即Dry工序和WET工 序。 And etching process could be categorized into Dry Etching (DE) and Wet Etch ing (WET) on the basis of tech nics and equipme nts. 作为蚀刻工序的一种实现方式， WET工序详细来讲可以包括清洗，湿蚀刻和脱膜。 As one of etch ing soluti on, Wet Etch ing in cludes wash ing, wet etch ing and stripp ing. 清洗：包括初清洗和成膜前清洗。 Washing: including pre-washing and pre-deposition washing 初清洗即玻璃基板从 PP box中拆包之后，进行的第一道清洗，它的主要目的是为了清除 玻璃基板表面本身携带的油污以及微尘颗粒。 Pre-washing is the first cleaning process after package of glass substrate being take n apart and the main purpose of pre-wash ing is to get rid of dirt and particles on glass substrate. 成膜前清洗即在每一道成膜之前进行的清洗，目的虽然也是为了去除油污以及颗粒，但 是这些杂质更多是由于外界污染造成，而去除这些杂质是为了成膜的顺利进行，提高成 膜的品质。 In itial-washi ng, clea ning process before sputteri ng for each glass substrate, aims to wipe off dirt and particles like the purpose of pre-washing, however most of this impurities accumulated on glass substrate is due to exter nal ambie nt contamination; to wipe off the impurities could well assist sputtering and improve the quality of sputteri ng process. 湿蚀刻：对于金属层和ITO导电层使用湿蚀刻进行蚀刻。 湿蚀刻是使用相应的金属蚀刻 液和ITO蚀刻液对膜层进行腐蚀， 可以去除掉不被光阻保护的部分， 从而形成我们需要 的线路结构。 Wet Etching: Use wet etching for metal layer and ITO conductive layer. Wet Etch ing is to use corresp onding metal etchi ng soluti on or ITO etch ing soluti on to erode metal or ITO layer, which can wipe off unwan ted parts without photo resist protecti on and rema in wan ted parts that compose wan ted circuits. 脱膜：无论干蚀刻还是湿蚀刻结束之后，都必须将所成线路上覆盖的光阻去除。相应的 会使用脱膜液将光阻分离出来并去除，保证下一道成膜顺利进行。 Stripp ing: the photo resist will be removed after both dry etch ing or wet etch ing. And corresp onding resoluti on will be applied to wipe off the photo resists, which is to en sure n ext process goes well. WET工序(清洗.脱膜，蚀(湿)刻)的工艺原理 Tech nique philosophy of Wet Etch