JXP60P02G_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP60P02G uses advanced trench S technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as G a load switch or in PWM applications. GENERAL FEATURES D  VDS =-20V ，ID =-60A PIN ASSIGNMENT RDS(ON)(Typ.)=5.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=7.0mΩ @VGS=-2.5V TO-252  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  PWM applications  Load switch Note：XX ：Year Code; YY ：Week Code. 100% UIS TESTED PACKAGE ! 100% ∆Vds TESTED!  TO-252 ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP60P02G -55°C to +150°C TO-252 60P02/XXYY 5000 ABSOLUTE MAXIMUM RATINGS (TC=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±12 V TC=25°C -60 Continuous drain current (T = 150 °C) a I