JXP1208MRG_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP1208MRG uses advanced trench D technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as G a load switch or in PWM applications. GENERAL FEATURES S  VDS =12V ，ID =8A RDS(ON)(Typ.)=16mΩ @VGS=2.5V PIN ASSIGNMENT RDS(ON)(Typ.)=12mΩ @VGS=4.5V  High power and current handing capability SOT23-3L  Lead free product is acquired (TOP VIEW)  Surface mount package D 3 APPLICATION  PWM applications 1 2 0 8  Load switch PACKAGE 1 2  SOT23-3L G S ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP1208MRG -55°C to +150°C SOT23-3L 1208 3000 ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) A parameter symbol limit unit Drain-source voltage VDS 12 V Gate-source voltage VGS ±12 V