JXP25P03_E靖芯科技 恒佳盛电子一级代理商.pdf

DESCRIPTION SCHEMATIC DIAGRAM The JXP25P03 uses advanced trench S technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as G a load switch or in PWM applications. GENERAL FEATURES D  VDS =-30V，ID =-25A PIN ASSIGNMENT RDS(ON)(Typ.)=11.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=9mΩ @VGS=-10V DFN3*3-8L/PDFN3*3-8L  High power and current handing capability  Lead free product is acquired S 1 5 D S 2 6 D  Surface mount package S 3 7 D APPLICATION G 4 8 D  PWM applications 5 6 7 8  Load switch 25P03 PACKAGE XXYY 4 3 2 1  DFN3×3-8L  PDFN3*3-8L Note：XX ：Year Code; YY ：Week Code. ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP25P03SDRG -55°C to +150°C DFN3×3-8L 25P03/XXYY 5000 JXP25P03PDRG -55°C to +150°C PDFN3×3-8L 25P03/XXYY 5000 ABSOLUTE MAXIMUM RATINGS (TA=25℃ u