JXP30N03G_E靖芯科技 恒佳盛电子一级代理商.pdf

STBCHIP 30V N-Channel Enhancement Mode MOSFET DESCRIPTION SCHEMATIC DIAGRAM The JXP30N03G uses advanced power trench D technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on- resistance. This device is suitable for use as a load switch or in PWM applications. G GENERAL FEATURES  ID =30A,VDS=30V S RDS(ON)(Typ.)=7.0mΩ@VGS=10V RDS(ON)(Typ.)=9.5mΩ@VGS=4.5V PIN ASSIGNMENT  Low Gate Charge  Advanced High Cell Density Trench TO-252 Technology (Top View)  100% EAS Guaranteed APPLICATION  Power Management Switches  DC/DC Converters PACKAGE  TO-252 Note：XXYY—Date Code ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP30N03G -55°C to +150°C TO-252 30N03/XXYY 2500 ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) A Parameter Symbol Limit Unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V T =25°C 30 A Continuous drain current (T = 150 °C) a