Si过渡层类金刚石薄膜界面优化及其性能研究.docxVIP

Si过渡层类金刚石薄膜界面优化及其性能研究 Abstract:In this paper, we optimized the interface of Si transition layer diamond thin film and studied its performance. The Si transition layer diamond thin film was deposited by microwave plasma chemical vapor deposition. The effects of Si concentration, growth temperature, and growth time on the interface morphology and quality were investigated. It was found that the interface quality and morphology could be significantly improved by optimizing the Si concentration, growth temperature, and growth time. The crystalline structure and surface morphology of the Si transition layer diamond thin film were characterized by X-ray diffraction and scanning electron microscopy, respectively. The results showed that the Si transition layer diamond thin film had a well-aligned crystal structure and a smooth surface with a root mean square roughness of 0.3 nm. The mechanical properties of the Si transition layer diamond thin film were evaluated by nanoindentation. The Si transition layer diamond thin film exhibited high hardness and elastic modulus, which were attributed to the improved interface quality and morphology. The Si transition layer diamond thin film also exhibited excellent optical and electrical properties. Thus, the optimized Si transition layer diamond thin film has great potential for applications in various fields such as microelectronics, optoelectronics, and mechanical engineering.Introduction:Diamond has attracted much attention due to its superior physical, mechanical, thermal, and electrical properties. However, the direct deposition of diamond on Si substrates is problematic due to the large lattice mismatch and thermal expansion coefficient mismatch between diamond and Si. Thus, the use of a transition layer between diamond and Si substrates has been proposed to improve the interface quality and morphology. Si is a promising candidate for the transition layer due to its compatibility with Si substrates and its similar crysta