模拟CMOS集成电路设计课件2 Basic MOS Device Physics.ppt

Channel Length Modulation Parameter, λ 第*页 Channel Length Modulation * 第*页 L L’ Channel Length Modulation (cont.) * 第*页 Subthreshold Conduction * 第*页 MOS Layout * 第*页 Device Capacitances * 第*页 Layout for Low Capacitance * 第*页 第*页 Other Parameters of LSM Intrinsic capacitors Depletion capacitance (CBD and CBS) Gate capacitance (CGS, CGD and CGB) 第*页 Other Parameters of LSM Depletion capacitors Bulk-drain/source PN junction Depletion capacitor of PN junction 第*页 Other Parameters of LSM Depletion capacitors Bulk-drain/source PN junction 第*页 Other Parameters of LSM Bottom & sidewall approximations 第*页 Other Parameters of LSM Bottom & sidewall approximations 第*页 Other Parameters of LSM Overlap capacitance 第*页 Other Parameters of LSM Gate to bulk overlap capacitance Channel capacitance 第*页 Other Parameters of LSM 第*页 Other Parameters of LSM 第*页 Other Parameters of LSM 第*页 Other Parameters of LSM G-S and G-D Capacitance * 第*页 MOS Small Signal Models * 第*页 Bulk Transconductance, gmb * 第*页 Gate Resistance * 第*页 MOS Small Signal Model with Capacitance * 第*页 Model * 第*页 Model(cont.) * 第*页 Behavior of MOS Device as a Capacitor * 第*页 Homework 2.1 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 * 第*页 * 本 * 研 College of Electronics & Information Engineering Analog Integrated Circuit Design Basic MOS Device Physics Instructor：韩志刚 MOS Device Structure * 第*页 NMOS and PMOS with Well * 第*页 MOS Symbols * 第*页 MOS Channel Formation * 第*页 I/V Characteristics * 第*页 I/V Characteristics * 第*页 I/V Characteristics (cont.) * 第*页 I/V Characteristics (cont.) * 第*页 Operation in Triode Region * 第*页 Operation in Active (Saturation) Region * 第*页 Active Region (cont.) * 第*页 Transconductance, gm * 第*页 Triode and Active Region Transition * 第*页 Active Active Threshold Voltage and Body Effect * 第*页 Threshold Voltage and Body Effect (cont.) * 第*页 No Body Effect With Body Effect 第*页 Formation of the channel for an Enhancement MOS Transistor 第*页 Transconductance Characteristics of an E