JXP10N03G_E靖芯科技 恒佳盛电子一级代理商.pdf

STBCHIP 30V N-Channel Enhancement Mode MOSFET DESCRIPTION SCHEMATIC DIAGRAM The JXP10N03G uses advanced trench D technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as G a load switch or in PWM applications. GENERAL FEATURES S  ID =10A,VDS=30V RDS(ON)(Typ.)=27mΩ@VGS=4.5V PIN ASSIGNMENT RDS(ON)(Typ.)=18mΩ@VGS=10V  High power and current handing capability TO-252-2L  Lead free product is acquired (Top View)  Surface mount package APPLICATION  PWM applications  Load switch PACKAGE  TO-252-2L XX:Year Code; YY:Week Code. ORDERING INFORMATION Part Number Storage Temperature Package Marking Devices Per Reel JXP10N03G -55°C to +150°C TO-252-2L 10N03/XXYY 3000 ABSOLUTE MAXIMUM RATINGS (T =25℃ unless otherwise noted) A Parameter Symbol Limit Unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V T =25°C 10 A Continuous drain current (T = 150 °C) a I J D