HOW TO USE SDRAM精品文档说明书.pdf

User’s Manual HOW TO USE SDRAM Document No. E0123N50 (Ver.5.0) Date Published October 2002 (K) Japan © Elpida Memory, Inc. 2001-2002 URL: © NEC Corporation 1998 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. SUMMARY OF CONTENTS CHAPTER 1 PRODUCT OUTLINE 14 CHAPTER 2 FEATURES OF PRODUCTS23 CHAPTER 3 OPERATION AFTER POWER APPLICATION 35 CHAPTER 4 BASIC SETTING (MODE REGISTER SETTING) 36 CHAPTER 5 STATUS TRANSITIONS 46 CHAPTER 6 COMMAND OPERATIONS 50 CHAPTER 7 BASIC OPERATION MODE57 CHAPTER 8 DQM CONTROL OPERATION64 CHAPTER 9 CKE CONTROL OPERATION 68 CHAPTER 10 BURST OPERATION 77 CHAPTER 11 MULTIBANK OPERATION 84 CHAPTER 12 CALCULATION OF CURRENT CONSUMPTION112 2 User’s Manual E0123N50 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag