《磁控溅射镍膜沉积速率的研究》-毕业论文(设计).doc

《磁控溅射镍膜沉积速率的研究》-毕业论文(设计).doc

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PAGE   磁控溅射镍膜沉积速率的研究 摘 要 镍,银白色金属,[nickel]——元素符号Ni,密度8.9g/cm3。熔点1455℃,沸点2730℃。化合价:2和3。质坚硬,具有磁性和良好的可塑性。有极好的耐腐蚀性,在空气中不易被氧化,且又耐强碱。所以性质决定镍膜具有美观干净、抗氧化、不易被腐蚀以及其他的特殊作用,因此用途广泛且及其常见。镍膜附着在其他金属上可以防止生锈、增加铁磁性和延展性。生活中,经常可以见到在服装产品中镀有镍膜的饰品,如钮扣、拉链、铆钉、金属耳环、项链、戒指等,工业上,镍膜更是大量用来参与制造不锈钢和其他抗腐蚀合金。故制备镍膜是一项常用且制备工艺繁多的课题。 本论文主要研究直流磁控溅射方法制备镍膜时,对溅射功率、气体流量、工作压强这三个工艺参数对镍膜沉积速率的的影响。通过实验结果得出:镍膜的沉积速率随溅射功率的增加而线性增加;镍膜的沉积速率随氩气流量的增加而增加,镍膜的沉积速率随工作气压的增加而先增加后减小。工作气压存在一个最佳值,当在这个气压下工作时,沉积速率将达到最大;镍膜的沉积速率随着氩气流量的增大而增大。 关键词;磁控溅射;薄膜;Ni;沉积速率 PAGE 8 PAGE ii Research on Deposition Rate of Nickel Films Based on the DC Magnetron Sputtering Abstract Nickel, silver-white metal, [nickel] - element symbol Ni, the density of 8.9g/cm3. Melting point 1455 ℃, boiling point 2730 ℃. Valence: 2 and 3. Quality hard, with magnetic properties and good plasticity. excellent corrosion resistance,alkali-resistant.In the air it can not be easily oxidized.Therefore, the nature of nickel film is beautiful clean, anti-oxidation, corrosion and other difficult to be the special role and therefore a wide range of uses and its common. Nickel film attached to the other metals to prevent rust on the increase and scalability ferromagnetism.In the life, we can often find that nickel-plated jewelry films is in the clothing products, such as buttons, zippers, rivets, metal earrings, necklaces, rings and so on. In the industry, nickel film is involved in the manufacture of a large number of used stainless steel and other anti - alloy corrosion. Preparation of nickel is a commonly used film preparation process and the variety of topics. In this paper, DC magnetron sputtering is used to study the influence of sputtering power, working pressure and gas flow rate on the Ni film deposition rate. The experimental results show that: Ni film deposition rate increased with the sputtering power increases linearly; the deposition rate increased with the pressure of work and then decreased. The working pressure has a best value, at this working pressure

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