用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展.PDF

第 16 卷 第 2 期 化　学　进　展 Vol. 16 No. 2 2004 年 3 月 PROGRESS IN CHEMISTRY 　Mar. , 2004 用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展 3 孟诗云　李光宪 　杨　其　黄亚江 ( 四川大学高分子材料科学与工程学院 　成都 610065) 摘 　要 　随着集成电路芯片的发展 ,生产物理和化学性质均一的高分子光阻剂得到了各信息产业国的 μ 重视。到目前为止 ,含对羟基苯乙烯基的高分子光阻剂已成为光刻蚀 0111 m 线宽芯片的关键技术。本文综 述了目前合成窄分布的含对羟基苯乙烯基的高分子光阻剂的各种方法 ,在此基础上比较了各种合成方法的 优缺点 ,为合成窄分布的含对羟基苯乙烯基的高分子光阻剂提供了必要的指导。 关键词 　对羟基苯乙烯 光阻剂 活性聚合 ( ) 中图分类号: O63211 ; TP333 　文献标识码 : A 　文章编号 : 2004 0220243207 Progress in the Synthesis of Poly( 42Hydroxystyrene) for Polymer Photoresists Meng Shiyun 　Li Guangxian 　 Yang Qi 　 Huang Yajiang ( The School of Polymer Materials Science and Technology , Sichuan University , Chengdu 610065 , China) Abstract 　With the development of the integrate circuit chip technology , more and more attentions have been paid to the synthesis of polymer photoresists with homogeneous chemical and physical features , for the reason that the fabricat2 ing polymer photoresists based on poly (42hydroxystyrene) became one of the key technologies for making the 0111μ m ( ) chip. In this paper , the methods of synthesizing narrow dispersing polymer photoresists based on poly 42hydroxystyrene was reviewed and compared with each other , in order to provide a useful guide for the synthesi