微电子关键性材料-光刻胶的现状与未来.ppt

紫外负性光刻胶（Polyisoprene Base)； 紫外正性光刻胶，包括G线胶 （436nm)、I线胶 (365 nm)； 深紫外光刻胶，包括KrF-248nm胶、ArF-193nm胶等； 目前最热门的 ArF-193nm Immersion； 极紫外-EUV(13.4n)和Imprint Tech-nology尚在研发探索中，而曾经喧嚣一时的F2-157mm已经出局。 Concept – Introduce a liquid between the lens and wafer Effect - Raise the NA of the stepper and thereby increase resolution ? Light acts like it is a shorter wavelength Those light rays which enter the final lens element at are reflected at the lens/air interface and not brought into focus Refractive index dependent Improved resolution Improved DOF at a given resolution Conserves infrastructure Light sources Masks, pellicles,optical materials Coatings Resists? Transparent at the exposing l Non-volatile Non-toxic Not interact with lens coatings Stable to exposing radiation Must not intact with resist Large effort at Motorola Two companies in US Nanoimprints – Austin, TX Supported by UTexas (G. Willson)/Motorola Nanonex – Princeton, NJ Princeton U./ Stephen Chou IBM showed chemical structures in their series of talks which centered on fluoro-alcohol polymers for 193i as both additives and top coats. In the first of these they compared and contrasted a number of hexafluoroisopropanol-containing (HFA) polymers where the HFA group was placed in different positions in the polymer backbone. The following two structures are representative of the point they were trying to make. * * May, 2007 G线胶436nm I线胶365nm KrF248nm ArF193nm D ArF193nm i ArF193nm i EUV Imprint ?  1um 500nm 250nm 130nm 90nm 65nm 45nm 32nm 22nm ? ArF-193i ArF-193i ArF-193 ArF-193 KrF-248 对应的光刻胶 32 45 65 90 130 180 线宽（nm） 256G 64G 16G 4G 1G 256M 集成度 2010 2008 2006 2004 2002 2000 投产年份 低 中 高 工程师的认可度 技术背离传统的主流光刻技术 掩膜(PSM)缺陷、表面平整度及厚度控制 双重曝光一起的交叉朴光的临近效应 技术难点 $5M $60M $35M 设备成本 适中 庞大 大 设备体积 5~50 mJ/cm2 30~50 mJ/cm2 光刻胶的敏感度 high 5-100wph 60-100wph 产率 Imprints 极紫外-EUV 193nm 浸